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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70 W at 25C Case Temperature
B
TO-220 PACKAGE (TOP VIEW)
q q q
1 2 3
10 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A
C E
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BDX33 BDX33A Collector-base voltage (IE = 0) BDX33B BDX33C BDX33D BDX33 BDX33A Collector-emitter voltage (IB = 0) BDX33B BDX33C BDX33D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating free air temperature range Storage temperature range Operating free-air temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. V EBO IC IB Ptot Ptot TJ Tstg TA VCEO VCBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 10 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT
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INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS BDX33 V (BR)CEO Collector-emitter breakdown voltage BDX33A IC = 100 mA IB = 0 (see Note 3) BDX33B BDX33C BDX33D VCE = 30 V V CE = 30 V V CE = 40 V V CE = 50 V ICEO Collector-emitter cut-off current V CE = 60 V V CE = 30 V V CE = 30 V V CE = 40 V V CE = 50 V V CE = 60 V VCB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V ICBO Collector cut-off current V CB = 120 V V CB = 45 V V CB = 60 V V CB = 80 V V CB = 100 V V CB = 120 V IEBO Emitter cut-off current VEB = VCE = hFE Forward current transfer ratio V CE = V CE = V CE = V CE = VCE = VBE(on) Base-emitter voltage V CE = V CE = V CE = V CE = IB = VCE(sat) Collector-emitter saturation voltage IB = IB = IB = IB = VEC Parallel diode forward voltage IE = 5V 3V 3V 3V 3V 3V 3V 3V 3V 3V 3V 8 mA 8 mA 6 mA 6 mA 6 mA 8A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IC = 4 A IC = 4 A IC = 3 A IC = 3 A IC = 3 A IB = 0 (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D 750 750 750 750 750 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4 V V V TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D MIN 45 60 80 100 120 0.5 0.5 0.5 0.5 0.5 10 10 10 10 10 1 1 1 1 1 5 5 5 5 5 10 mA mA mA V TYP MAX UNIT
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.78 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 3 A VBE(off) = -3.5 V IB(on) = 12 mA RL = 10
MIN IB(off) = -12 mA tp = 20 s, dc 2%
TYP 1 5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AF
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2*0 tp = 300 s, duty cycle < 2% IB = IC / 100
TCS130AH
hFE - Typical DC Current Gain
TC = -40C TC = 25C TC = 100C 10000
1*5
1000
1*0
VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10
TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS130AJ
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 3.
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INFORMATION
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS130AB
Figure 4.
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INFORMATION
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
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BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
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